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## 理論

${\displaystyle M(q)={\frac {\mathrm {d} \Phi _{\mathrm {B} }}{\mathrm {d} q}}}$

• 電阻${\displaystyle R(I)={\frac {\mathrm {d} V}{\mathrm {d} I}}}$
• 電感${\displaystyle L(I)={\frac {\mathrm {d} \Phi _{\mathrm {B} }}{\mathrm {d} I}}}$
• 電容${\displaystyle {\frac {1}{C(q)}}={\frac {\mathrm {d} V}{\mathrm {d} q}}}$

${\displaystyle V(t)=M(q(t))I(t)\,}$

${\displaystyle {\frac {1}{C}}={\frac {\mathrm {d} U}{\mathrm {d} q}}={\frac {\mathrm {d} {\dot {\Phi }}}{\mathrm {d} q}}}$

${\displaystyle R={\frac {\mathrm {d} U}{\mathrm {d} I}}={\frac {\mathrm {d} {\dot {\Phi }}}{\mathrm {d} {\dot {q}}}}}$

${\displaystyle M={\frac {\mathrm {d} \Phi }{\mathrm {d} q}}}$

${\displaystyle L={\frac {\mathrm {d} \Phi }{\mathrm {d} I}}={\frac {\mathrm {d} \Phi }{\mathrm {d} {\dot {q}}}}}$

## 实现

IntelMicron聯合研發的3D XPoint memory。（Intel表示所用并不是ReRAM，根据推断，为相变存储器的可能性更大，此条消息存疑。）廠商表示，此技術的密度是DRAM的十倍、速度是NAND的千倍、寫入次數為10,000,000次。

## 種類

### 固態

2007年惠普公司資訊與量子系統實驗室的研究人員在的領導下成功研製了固態的憶阻器[14][15][16]－它是由一片雙層的二氧化鈦薄膜所形成，當電流通過時，其電阻值就會改變。固態的憶阻器的製造需要涉及物料的納米技術。這個憶阻器並不像其理論般涉及磁通量，或如電容器般儲存電荷，而是以化學技術來達至電阻電流歷史改變的性質。

## 可能應用

Some patents related to memristors appear to include applications in programmable logic,[21] signal processing,[22] neural networks,[23] and control systems.[24]

## 參考

1. ^ Chua, Leon O. Memristor - The Missing Circuit Element. IEEE Transactions on Circuit Theory. Sep 1971, CT–18 (5): 507–519.
2. ^ Tour, James M and Tao He. Electronics: The fourth element. Nature. 2008, 453: 42–43. doi:10.1038/453042a.
3. ^ C. B. Lee, B. S. Kang, M. J. Lee, S. E. Ahn, G. Stefanovich, W. X. Xianyu, K. H. Kim, J. H. Hur, H. X. Yin, Y. Park, and I. K. Yoo, Appl. Phys. Lett. 91, 082104 (2007).
4. ^ B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005).
5. ^ S. Q. Liu, N. J. Wu, and A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000).
6. ^ A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000).
7. ^ W. Shen, R. Dittmann, U. Breuer, and R. Waser, Appl. Phys. Lett. 93, 222102 (2008).
8. ^ Strukov, Dmitri B, Snider, Gregory S, Stewart, Duncan R and Williams, Stanley R. The missing memristor found. Nature. 2008, 453: 80–83. doi:10.1038/nature06932.
9. ^ 'Missing link' memristor created. EETimes. 2008-04-30 [2008-04-30].
10. ^ Marks, Paul. Engineers find 'missing link' of electronics. New Scientist. 2008-04-30 [2008-04-30].
11. ^ Researchers Prove Existence of New Basic Element for Electronic Circuits - Memristor. Physorg.com. 2008-04-30 [2008-04-30].
12. ^ [spider.cs.ntou.edu.tw/twp/class/Electronic981/part2.pdf 電子電路學講義2
13. ^ Chen W-K. Circuit Elements, Modeling, and Equation Formulation. The Circuits and Filters Handbook 2nd ed. CRC Press 2003. ISBN 0-8493-0912-3.
14. ^ Fildes, Jonathan. Getting More from Moore's Law. BBC. 2007-11-13 [2008-04-30].
15. ^ Bulletin for Electrical and Electronic Engineers of Oregon (PDF). Institute of Electrical and Electronics Engineers. Sept 2007 [2008-04-30].
16. ^ R. Stanley Williams, HP biography
17. ^ US Patent Application 11/655,193
18. ^ http://www.informationweek.com/news/hardware/processors/showArticle.jhtml?articleID=207403582
19. http://www.spectrum.ieee.org/may08/6207
20. ^ Kanellos, Michael. HP makes memory from a once theoretical circuit. CNET News.com. 2008-04-30 [2008-04-30].
21. ^ U.S. Patent 7,203,789
22. ^ U.S. Patent 7,302,513
23. ^ U.S. Patent 7,359,888
24. ^ U.S. Patent Application 11/976,927

## 外部連結

This article uses material from the Wikipedia article "憶阻器", which is released under the Creative Commons Attribution-Share-Alike License 3.0. There is a list of all authors in Wikipedia

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